FAB SUPPORT AB has chosen to work with CS CLEAN SOLUTIONS who uses advanced chemisorption technology to design waste gas abatement systems unmatched in their scrubbing efficiency, yet absolutely simple to operate.

FAB SUPPORT has over 20 years of experience in supporting this dry bed chemisorption technology developed by CS CLEAN SOLUTIONS.

BENEFITS:
The CLEANSORB dry absorber systems consume neither electricity, water, nor fuel. Moreover, there is no contamination of precious water resources due to discharge of contaminated waste water – a major benefit in terms of eco balance.

TECHNOLOGY:
The CLEANSORB granulate converts hazardous gases into stable inorganic salts at ambient temperature. It is the most elegant and environmentally friendly purification technology of exhaust gas abatement. A wide range of CLEANSORB model sizes are available to meet the needs of all our customers, from small-scale university researchers to round-the-clock wafer fabrication.

CAPACITY:
One column of CLEANSORB granulate typically binds several thousand liters of hazardous gas into safe, solid by-products. We offer optimized solutions for all process sizes and applications.

REFILL SERVICE:
Used CLEANSORB columns are not discarded, but refilled by FAB SUPPORT with fresh granulate and with minimal generation of waste material.

THE SOLUTIONS FOR GAS ABATEMENT:
– CLEANSORB dry bed removal of process waste gas.
– CLEAN-PROTECT safeguard against emergency gas release.
– CLEANVENT mini cartridge for gas cabinet vent lines.


Process ApplicationTypical Gases or Liquid Precursors Used/Abated
Plasma Etch
Metal EtchCl2, BCl3, HCl, CF4, SF6
Poly Silicon EtchCl2, HBr, Br2, SF6, CF4, NF3, C4F8
Nitride Etch, Oxide EtchCF4, CHF3, C2F6, C3F8, C4F8, CH2F2, NF3, SF6, O2
Tungsten EtchbackSF6
Ion Implantation
High, Medium, LowAsH3, PH3, BF3, P, As, Sb, Sb(CH3)3, GeH4, GeF4
ALD, LPCVD, PECVD, HDP-CVD
TEOS, undopedTEOS, O2, O3
BPSGTEOS, O3, TMP, TMB, SiH4, PH3, B2H6
Poly-Si (doped)SiH4, (AsH3, PH3)
Silicon GermaniumSiH4, GeH4
OxideSiH4, O2
Nitride, dopedSiH4, NH3, (TMP, TMB, SiH4, PH3, B2H6)
Oxynitride, dopedSiH4, NH3, N2O, (TMP, TMB, SiH4, PH3, B2H6)
Low-k dielectrics1MS, 2MS, 3MS, 4MS, DMDMOS
High-k dielectricsTMA, TEMAH, TDEAH, TAETO, PET
Gate ElectrodesMPA, Ru(Etcp)2, PEMAT
Copper CVDCu(hfac)(TMVS)
Tungsten (Silicide)WF6, SiH4, H2, (DCS)
Barrier LayersTiCl4, NH3, TDMAT, PDMATa, PDEATa, TAETO, W(CO)6
Plasma Chamber Cleaning
PFC plasmaC2F6, C4F8, NF3
Remote NF3 plasmaF2
Epitaxy
Silicon (doped)DCS, TCS, SiH4, (AsH3, PH3, B2H6)
Silicon-GermaniumSiH4, GeH4, CBr4, 1MS, 2MS, 3MS, HCl
Silicon-Carbide (SiC)SiH4, CH4, C3H8, TMA, HCl
Compound Semiconductors, Optoelectronics, III-V on Si
GaAs, InP MOVPE (MOCVD)TMGa, AsH3, TBA, TMIn, PH3, TBP
GaN MOVPE (MOCVD)TMGa, NH3, UDMH
MBE (MOMBE)Cl2, BCl3, HBr, SiF4, SF6, CH4, GaCl3, InCl3, AsH3, O2
Photovoltaics
Concentrator PhotovoltaicsPH3, AsH3, metalorganics, SiH4, GeH4
CIGSH2S, H2Se
Gas Supply
Emergency Gas Release AbsorbersToxics, Pyrophorics, Corrosives
Gas Cabinet Purging

Please contact us for assistance in choosing the right scrubbing system for your needs.